hexfet ? power mosfet irfz24n fifth generation hexfet ? power mosfets from international rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. l advanced process technology l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated description 9/13/99 v dss = 55v r ds(on) = 0.07 i d = 17a s d g t o -22 0 ab parameter min. typ. max. units r jc junction-to-case CCCC CCCC 3.3 r cs case-to-sink, flat, greased surface CCCC 0.50 CCCC c/w r ja junction-to-ambient CCCC CCCC 62 thermal resistance parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 17 i d @ t c = 100c continuous drain current, v gs @ 10v 12 a i dm pulsed drain current ? 68 p d @t c = 25c power dissipation 45 w linear derating factor 0.30 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 71 mj i ar avalanche current ? 10 a e ar repetitive avalanche energy ? 4.5 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) absolute maximum ratings www.irf.com 1 pd - 91354a downloaded from: http:///
irfz24n 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.052 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.07 v gs = 10v, i d = 10a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 4.5 CCC CCC s v ds = 25v, i d = 10a CCC CCC 25 v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v q g total gate charge CCC CCC 20 i d = 10a q gs gate-to-source charge CCC CCC 5.3 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 7.6 v gs = 10v, see fig. 6 and 13 ? t d(on) turn-on delay time CCC 4.9 CCC v dd = 28v t r rise time CCC 34 CCC i d = 10a t d(off) turn-off delay time CCC 19 CCC r g = 24 t f fall time CCC 27 CCC r d = 2.6 , see fig. 10 ? between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 370 CCC v gs = 0v c oss output capacitance CCC 140 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 65 CCC ? = 1.0mhz, see fig. 5 nh a na i dss drain-to-source leakage current i gss l s internal source inductance CCC CCC ns s d g 4.5 7.5 electrical characteristics @ t j = 25c (unless otherwise specified) CCC l d internal drain inductance CCC CCC CCC notes: ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 10a, di/dt 280a/s, v dd v (br)dss , t j 175c ? pulse width 300s; duty cycle 2%. ? v dd = 25v, starting t j = 25c, l = 1.0mh r g = 25 , i as = 10a. (see figure 12) parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 10a, v gs = 0v ? t rr reverse recovery time CCC 56 83 ns t j = 25c, i f = 10a q rr reverse recoverycharge CCC 120 180 nc di/dt = 100a/s ? source-drain ratings and characteristics a CCC CCC 68 CCC CCC 17 s d g downloaded from: http:///
irfz24n www.irf.com 3 fig 1. typical output characteristics, t j = 25 o c fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics, t j = 175 o c 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 25c c a 4.5v 1 10 100 0.1 1 10 100 4.5v i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse w idth t = 175c c a 1 10 100 4567891 0 t = 25c j gs v , gate-to-source volta g e ( v ) d i , drain-to-source c urrent (a) t = 175c j a v = 25v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (n orm alized) v = 10v gs a i = 17a d downloaded from: http:///
irfz24n 4 www.irf.com fig 7. typical source-drain diode forward voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage 0 100 200 300 400 500 600 700 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss 0 4 8 12 16 20 0481 21 62 0 q , total gate char g e ( nc ) g v , gate-to-source voltage (v) gs a for test circuit s ee figure 13 v = 44v v = 28v i = 10 a dsds d 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source volta g e ( v ) ds i , drain current (a) ope ration in this area limite d by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c sin g le p u ls e cj downloaded from: http:///
irfz24n www.irf.com 5 fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % fig 10b. switching time waveforms r d v gs r g d.u.t. 10v fig 11. maximum effective transient thermal impedance, junction-to-case + - v dd 0 4 8 12 16 20 25 50 75 100 125 150 175 c i , d rain current (a m ps) d t , case temperature (c) a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectan g ular pulse duration ( sec ) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 s in g l e p u l s e ( thermal response ) a thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c downloaded from: http:///
irfz24n 6 www.irf.com fig 12a. unclamped inductive test circuit v ds l d.u.t. v dd i as t p 0.01 r g + - t p v ds i as v dd v (br)dss 10 v fig 12b. unclamped inductive waveforms d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit q g q gs q gd v g charge 10 v fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 j e , single pulse avalanche energy (m j) as a startin g t , junction temperature ( c ) i top 4.2a 7.2a bo tto m 10a v = 25v d dd downloaded from: http:///
irfz24n www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer ? * downloaded from: http:///
irfz24n 8 www.irf.com package outline to-220abdimensions are shown in millimeters (inches) to-220ab part marking information lead assignments 1 - gate 2 - drain 3 - sou rc e 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 d im e n s io n in g & to l e r a n c ing p e r a n s i y 1 4.5m , 1 9 82. 3 o u t lin e c o n f o r m s to je d e c o u t lin e to -2 20 -a b . 2 controlling dimension : inch 4 heat sink & lead measurements do n ot include burrs. part number international rectifier logo example : this is an irf1010 w it h as se m b ly lot c ode 9b1m assembly lot co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 9/99 downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///
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